Patterning scheme to improve euv resist and hard mask selectivity

ABSTRACT

Methods and film stacks for extreme ultraviolet (EUV) lithography are described. The film stack comprises a substrate with a hard mask, bottom layer, middle layer and photoresist. Etching of the photoresist is highly selective to the middle layer and a modification of the middle layer allows for a highly selective etch relative to the bottom layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. patent application Ser. No.16/504,646, filed on Jul. 8, 2019, which claims priority to U.S.Provisional Application No. 62/695,745, filed Jul. 9, 2018, the entiredisclosures of which are hereby incorporated by reference herein.

TECHNICAL FIELD

The present disclosure relates generally to patterning methods with highmaterial layer selectivity. In particular, the disclosure relates tomethods to improve the selectivity of extreme ultraviolet (EUV) resistsand hard mask underlayers for patterning applications.

BACKGROUND

Photolithography employs photoresists, which are photosensitive films,for transfer of negative or positive images onto a substrate, e.g., asemiconductor wafer. Subsequent to coating a substrate with aphotoresist, the coated substrate is exposed to a source of activatingradiation, which causes a chemical transformation in the exposed areasof the surface. The photo-resist coated substrate is then treated with adeveloper solution to dissolve or otherwise remove either theradiation-exposed or unexposed areas of the coated substrate, dependingon the type of photoresist employed.

Lithographic techniques for creation of features having sizes of thirtynanometers or less, however, suffer from a number of shortcomings. Forexample, line width variations of a resist film produced by suchtechniques can be too large to be acceptable in view of tighteningdimensional tolerances typically required in this range, e.g.,tolerances of the order of the scales of the molecular components of theresist film.

Such linewidth variations may be classified as line edge roughness (LER)and/or line width roughness (LWR).

Line edge roughness and line width roughness reflect linewidthfluctuations that may lead to variations in device characteristics. Ascritical dimensions for integrated circuits continued to shrink,linewidth fluctuations will play an increasingly significant role incritical dimensions (CD) error budget for lithography. Several suspectedsources of LER and LWR in resist patterns include the reticle quality,the aerial image quality, and resist material properties.

Extreme ultraviolet (EUV) lithography (EUVL) shows promise as a nextgeneration lithography technique. The use of EUV resists simplifiespatterning processes, requiring fewer masks than a traditional 193iprocess. However, EUV throughput is slower and has lower etchselectivity than the traditional 193i process. the thickness of the EUVresist should be about 100-250 Å. For an EUV resist scheme to workeffectively, the middle layer (ML) etch process should be highlyselective relative to the photoresist. Current ML processes use fluorinechemistry that has about a 1:1 selectivity, or rely on a polymer dump toachieve higher selectivity. In a polymer dump process, the LER and LWRincrease and shrink the spatial critical dimensions. Therefore, there isa need for improved materials, film stacks and/or methods of patterninga substrate with increased etch selectivity.

SUMMARY

One or more embodiments of the disclosure are directed to methods ofetching a substrate. A substrate with a film stack thereon is provided.The film stack comprises a bottom layer on a hard mask, a middle layeron the bottom layer and a patterned photoresist on the middle layer. Themiddle layer is etched through the photoresist to form a patternedmiddle layer and expose portions of the bottom layer. The middle layeris etched selective over the photoresist. The substrate is exposed to areactant to convert the patterned middle layer to a modified patternedmiddle layer. The bottom layer is etched through the modified patternedmiddle layer to form a patterned bottom layer and expose portions of thesubstrate. The bottom layer is selectively etched over the modifiedpatterned middle layer.

Additional embodiments of the disclosure are directed to EUV patterningmethods. A substrate comprising a substrate structure and a hard maskstructure is provided. The substrate structure comprises a low-kdielectric with a metal hard mask formed thereon. The hard maskstructure comprises a bottom layer formed on the metal hard mask, amiddle layer formed on the bottom layer and a photoresist formed on themiddle layer. The bottom layer comprises a diamond-like carbon material.The photoresist is patterned using EUV radiation and a developer toexpose portions of the middle layer and leave a residue of thephotoresist. The photoresist residue is removed by exposing thesubstrate to a plasma comprising one or more of O₂, N₂, H₂ or HBr. Themiddle layer is selectively etched relative to the photoresist to exposeportions of the bottom layer and form a patterned middle layer. Thepatterned photoresist is removed. The patterned middle layer is exposedto an oxidizing agent to convert the patterned middle layer to amodified patterned middle layer. The oxidizing agent comprises aninductively coupled O₂ plasma. The bottom layer is selectively etchedrelative to the modified patterned middle layer to expose portions ofthe metal hard mask and form a patterned bottom layer. The modifiedpatterned middle layer is removed. The metal hard mask is etchedrelative to the patterned bottom layer to expose portions of the low-kdielectric and form a patterned hard mask. The patterned bottom layer isremoved. The low-k dielectric is etched through the patterned hard maskand the patterned hard mask is removed.

Further embodiments of the disclosure are directed to film stacks forEUV patterning. The film stacks comprise a low-k dielectric with a hardmask on the low-k dielectric. The hard mask comprises one or more of TiNor WC and has a thickness less than or equal to about 200 Å. An optionallayer comprising silicon oxide having a thickness less than or equal toabout 200 Å is on the hard mask. A bottom layer is on the optional layeror the hard mask. The bottom layer comprises a diamond like carbonhaving a thickness less than or equal to about 300 Å. A middle layer ison the bottom layer. The middle layer has a thickness less than or equalto about 200 Å and comprises one or more of a bottom anti-reflectivecoating (BARC), dielectric anti-reflective coating (DARC), organic BARCor doped silicon. A patterned photoresist is on the middle layer. Thepatterned photoresist comprises an organic resist having a thicknessless than or equal to about 280 Å or a metal oxide photoresist with athickness less than or equal to about 130 Å.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 depicts a flowchart of a method in accordance with one or moreembodiment of the disclosure; and

FIGS. 2A through 2N illustrated schematic representations of the methodof FIG. 1.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the invention, it isto be understood that the invention is not limited to the details ofconstruction or process steps set forth in the following description.The invention is capable of other embodiments and of being practiced orbeing carried out in various ways.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, amorphous silicon, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure and/orbake the substrate surface. In addition to film processing directly onthe surface of the substrate itself, in the present invention, any ofthe film processing steps disclosed may also be performed on anunderlayer formed on the substrate as disclosed in more detail below,and the term “substrate surface” is intended to include such underlayeras the context indicates. Thus for example, where a film/layer orpartial film/layer has been deposited onto a substrate surface, theexposed surface of the newly deposited film/layer becomes the substratesurface.

As used herein, “extreme UV”, “EUV”, or the like, refers to radiation inthe approximate range of 10 nm to 124 nm. In some embodiments, EUVradiation (also referred to as EUV light) in the range of 10 nm to 15nm. In one or more embodiments, EUV light at a wavelength of about 13.5nm is employed.

Some embodiments of the disclosure advantageously provide patterningschemes involved conversion of middle layer from one material to anotherto achieve high selectivity in ML opening relative to the resistmaterial. Some embodiments of the disclosure advantageously providemethods of modifying a middle layer to increase etch selectivityrelative to a bottom layer. Some embodiments advantageously providepatterning schemes using one material (e.g., Si or B) for a middle layerto achieve high selectivity to EUV resist. After the middle layer hasbeen opened, the middle layer can be converted to another material(e.g., SiO or BO) to achieve high selectivity to a bottom layer. In someembodiments, the conversion of the middle layer (e.g., Si to SiO)enables the middle layer to be removed by wet etch (if applicable).

Current middle layers use silicon oxynitride (SiON) type films which donot significantly change composition during etch processes. Someembodiments of the disclosure advantageously provide middle layers ofamorphous silicon (a-Si) which can be converted to silicon oxide (SiO)increasing selectivity of the middle layer to the bottom layer during aBL openings process. In some embodiments, the a-Si is highly etchselective (>10:1) relative to the photoresist during middle layer etchand after conversion to a-Si becomes highly etch selective relative tothe bottom layer during bottom layer etch. In some embodiments, the lowdensity a-Si enhances the conversion to silicon oxide by increasing theoxygen penetration within the film.

Some embodiments of the disclosure provide middle layers comprising oneor more of silicon, amorphous silicon, doped amorphous silicon, boron ordoped boron. A chlorine (Cl₂) chemical etch can be used for the ML openthat has higher selectivity to EUV photoresist (versus fluorinechemistry) without significant critical dimension (CD) chamber orpolymer formation. The a-Si film can be porous with a relatively lowdensity that allows for a higher etch rate. However, low density filmsare not ideal masks for the bottom layer, especially for high-aspectratio (HAR) etch where high bias potential is applied. To increaseselectivity, some embodiments convert the porous film to an oxide film(e.g., a-Si to SiO). The converted oxide film may have a higher densityand achieve higher selectivity to the underlayer (e.g., carbon).

FIG. 1 illustrates an exemplary method 100 for patterning a substrate.FIGS. 2A through 2N illustrated schematic cross-sectional views of afilm stack 200 during a substrate patterning process in accordance withthe method 100 of FIG. 1. At 110, a film stack 200 is formed. The filmstack 200 illustrated in FIG. 2A is separated, for descriptive purposesonly, into a substrate structure 204 and a hard mask structure 208. Thehard mask structure 208 comprises a photoresist 260 (PR), a middle layer250 (ML) and a bottom layer 240 (BL).

As will be discussed below, the substrate structure 204 can be made upof multiple layers with the bottom-most layer being the target of thepatterning application. The bottom-most layer of some embodiments is a(low-k) dielectric layer 210, and may also be referred to as thesubstrate. In this regard, the substrate structure 204 illustratedcomprises the dielectric layer 210, a hard mask 220 and an optionallayer 230. While the film stack 200 illustrated has the dielectric layer210 as the bottom-most layer, the skilled artisan will recognize thatthere can be one or more additional films or layers which the dielectriclayer 210 is formed upon.

The method 100 illustrated begins with formation of the film stack 200and moves through individual processes/sub-processes to form a patternedsubstrate (a patterned dielectric layer 212, shown in FIG. 2H). However,the skilled artisan will recognize that the method can include some ofthe illustrated processes, all of the illustrated process or additionalun-illustrated processes.

At 120, and shown in FIG. 2B, a pattern is defined in the photoresist260. This may also be referred to as patterning the photoresist 260 orforming a patterned photoresist 262. Patterning the photoresist 260 canbe done by any suitable lithography process known to the skilledartisan. In some embodiments, patterning the photoresist 260 comprisesexposing the photoresist 260 to a patterned EUV radiation source and adeveloper. The developer can remove a portion of the photoresist toexpose portions of the middle layer. In some embodiments, thephotoresist 260 is a negative tone photoresist and the developer removesportions of the photoresist 260 not exposed to the radiation source. Insome embodiments, the photoresist 260 is a positive tone photoresist andthe developer removes portions of the photoresist 260 that have beenexposed to the radiation source.

The photoresist 260 of some embodiments comprise one or more of anorganic photoresist or a metal oxide photoresist. In some embodiments,the organic resist comprises an organic photoresist, also referred to asa chemically amplified resist (CAR). The organic photoresist can have athickness less than or equal to about 280 Å. In some embodiments, theorganic photoresist has a thickness less than or equal to about 270 Å,260 Å, 250 Å, 240 Å, 230 Å, 220 Å, 210 Å or 200 Å. In some embodiments,the organic photoresist has a thickness in the range of about 190 Å toabout 280 Å, or in the range of about 200 Å to about 270 Å, or in therange of about 210 Å to about 260 Å, or in the range of about 220 Å toabout 250 Å.

In some embodiments, the photoresist 260 comprises a metal oxidephotoresist. In some embodiments, the metal oxide comprises a metal atomand one or more of carbon (C), hydrogen (H), oxygen (O) or nitrogen (N).In some embodiments, the metal oxide photoresist has a thickness lessthan or equal to about 130 Å, 120 Å, 110 Å, 100 Å, 90 Å or 80 Å. In someembodiments, the metal oxide photoresist has a thickness in the range ofabout 70 Å to about 130 Å, or in the range of about 80 Å to about 120 Å,or in the range of about 90 Å to about 110 Å, or about 100 Å.

In some embodiments, patterning the photoresist 260 forms a patternedphotoresist 262 with openings 263. A residue 264 may be left in theopenings 263 or in the patterned photoresist 262. At 130, the residue264 is removed in a cleaning process to form patterned photoresist 265.The residue 264 may be colloquially known as “scum” and the cleaningprocess referred to as “descumming”. The patterned photoresist 262 inFIG. 2B illustrates residue 264. The patterned photoresist 265illustrated in FIG. 2C is after the cleaning process so that the residue264 has been removed.

Removing the residue 264 can be done by any suitable process. In someembodiments, removing the residue 264 from the photoresist comprisesexposing the film stack 200 to a plasma comprising one or more of HBr,oxygen gas (O₂), nitrogen gas (N₂), hydrogen gas (H₂), argon (Ar) orhelium (He).

At 140, the pattern formed in the patterned photoresist 262 istransferred to the middle layer 250 to form a patterned middle layer252. The patterned middle layer 252 has openings 256 and expose portions241 of the bottom layer 240, as shown in FIG. 2D. This process is alsoreferred to as middle layer (ML) opening. The middle layer 250 ispatterned by selectively etching the middle layer 250 over the patternedphotoresist 262. As used in this specification and the appended claims,phrases like “selectively etching the middle layer over the patternedphotoresist”, and the like, means that the first layer (i.e., middlelayer in this example) is etched at a faster rate than the second layer(i.e., patterned photoresist in this example). The skilled artisan willrecognize that this phrase does not imply a physical orientation of thelayers; rather, a relative etch rate is described. Stated another way,the middle layer 250 is patterned by selectively etching the middlelayer 250 relative to the patterned photoresist 262.

The middle layer 250 of some embodiments comprises a material with goodadhesion to the photoresist 260 and the bottom layer 240. In someembodiments, the middle layer 250 comprises a material that reduces oreliminates the formation of residue 264 during patterning of thephotoresist 260. In some embodiments, the middle layer 250 comprises oneor more of a bottom anti-reflective coating (BARC), a dielectricanti-reflective coating (DARC), organic BARC (e.g., having an organicbase), a doped silicon (e.g., phosphorous doped silicon) or a dopedboron film. In some embodiments, the middle layer 250 comprises one ormore of silicon or boron. In some embodiments, the middle layer 250 issubstantially amorphous. In one or more embodiments, the middle layer250 consists essentially of amorphous silicon (a-Si). As used in thismanner, the term “consists essentially of” means that the subject filmis greater than or equal to about 90%, 95%, 98%, 99% or 99.5% of thestated material. In some embodiments, the middle layer 250 consistsessentially of boron.

The thickness of the middle layer 250 can be varied. In someembodiments, the middle layer 250 has a thickness less than or equal toabout 200 Å, 190 Å, 180 Å, 170 Å or 160 Å.

In some embodiments, the middle layer 250 is etched by exposing the filmstack 200 to an etchant comprising or consisting essentially of achlorine-based etchant.

At 150, as shown in FIG. 2E, the patterned middle layer 252 is exposedto a reactant to convert the patterned middle layer 252 to a modifiedpatterned middle layer 254. In some embodiments, the modified patternedmiddle layer 254 comprises an oxide of the material of the patternedmiddle layer 252. In some embodiments, modifying the patterned middlelayer 252 increases the etch selectivity of the patterned middle layer252 relative to the bottom layer 240.

In the illustrated embodiment, the patterned photoresist 262 is alsoconverted to a modified patterned photoresist 266 (e.g., an oxide of thephotoresist material). In some embodiments, the reactant removes thepatterned photoresist 264 in the same process as forming the modifiedpatterned middle layer 254. The patterned photoresist 264 can be removedbefore or during formation of the modified patterned middle layer 254,as illustrated in FIG. 2F. In some embodiments, the patternedphotoresist 264, or modified patterned photoresist 266 is removed afterformation of the modified patterned middle layer 254.

The reactant can be any suitable reactant that can change the etchselectivity of the middle layer 250 relative to the bottom layer 240. Insome embodiments, the reactant comprises an oxygen (O₂) inductivelycoupled plasma. In some embodiments, the reactant comprises an oxygen(O2) plasma generated by one or more of an inductively coupled plasma(ICP) source, a capacitively coupled plasma (CCP) source, a microwaveplasma source or any energy source sufficient to generate plasma orradicals to active the reactant. In some embodiments, the middle layer250 comprises a material that can be converted back and forth betweennon-oxygen rich and oxygen rich materials to have different selectivitythan the photoresist or bottom layer.

At 160, after formation of the modified middle layer 254, the bottomlayer 240 can be etched through the openings 256 in the modified middlelayer 254, as shown in FIG. 2G. The pattern transfer illustrated in FIG.2G forms a patterned bottom layer 242 with openings 244 and exposesportions of the substrate structure 204. The patterned bottom layer 242is selectively etched over (relative to) the modified patterned middlelayer 254. This process may also be referred to as bottom layer (BL)opening.

The bottom layer 240 can be made of any suitable material. In someembodiments, the bottom layer 240 comprises a material with one or moreof good adhesion to the photoresist, good adhesion to the middle layermaterial, good adhesion to the underlying optional layer or hard mask,high modulus, amorphous or low stress. The bottom layer 240 of someembodiments comprises a diamond-like carbon material. In someembodiments, the diamond-like carbon material has high density(e.g., >1.8 g/cc), high modulus (e.g., >150 GPa) and low stress (e.g.,<−500 MPa). In some embodiments, the diamond-like carbon material has ahigh sp3 carbon content. In one or more embodiments, thequantity/percentage of sp3 hybridized carbon atoms in the diamond-likecarbon material is at least 40, 45, 50, 55, 60, 65, 70, 75, 80, or 85percent of sp3 hybridized carbon atoms. In some embodiments, thediamond-like carbon material may contain from about 50 to about 90percent of sp3 hybridized carbon atoms. The diamond-like carbon materialmay contain from about 60 to about 70 percent of sp3 hybridized carbonatoms. In some embodiments, the bottom layer 240 comprises a carbon filmdeposited by plasma enhanced chemical vapor deposition, plasma enhancedatomic layer deposition or a spin on carbon.

The bottom layer 240 can have any suitable thickness. In someembodiments, the bottom layer 240 has a thickness less than or equal toabout 300 Å, 290 Å, 280 Å, 270 Å, 260 Å or 250 Å.

Selectively etching the bottom layer 240 to form the patterned bottomlayer 242 can be done by any suitable process known to the skilledartisan. In some embodiments, the bottom layer 240 is selectively etchedrelative to the modified patterned middle layer 254 by an anisotropicetch process.

After selectively etching the bottom layer 240, the modified patternedmiddle layer 254 can be removed, as shown in FIG. 2H. In someembodiments, the etching the bottom layer 240 and removing the modifiedpatterned middle layer 254 occur in substantially the same process.

The substrate structure 204 illustrated in the Figures comprises adielectric layer 210 with a hard mask 220 formed thereon. The hard mask220 has an optional layer 230 formed thereon. The optional layer 230 ofsome embodiments comprises or consists essentially of silicon oxide. Thehard mask structure 208 is formed on the hard mask 220 or the optionallayer 230.

In some embodiments, the optional layer 230 comprises or consistsessentially of silicon dioxide and has a thickness less than or equal toabout 200 Å, 190 Å, 180 Å, 170 Å or 160 Å.

In some embodiments, the hard mask comprises or consists essentially ofone or more of titanium nitride or tungsten carbide, and the hard maskhas a thickness less than or equal to about 200 Å, 190 Å, 180 Å, 170 Åor 160 Å.

In some embodiments, the dielectric layer 210 comprises a low-kdielectric. The dielectric layer 210 can have any suitable thickness. Insome embodiments, the low-k dielectric comprises SiCOH.

In FIG. 2I, the optional layer 230 is patterned to form patternedoptional layer 232 with openings 234. After or during formation of thepatterned optional layer 232, the patterned bottom layer 242 can beremoved, as shown in FIG. 2J. The pattern transfer to the optional layer230 and removal of the patterned bottom layer 242 do not have anenumerated process in method 100 of FIG. 1. If the optional layer 230 ispresent, this process would occur between 160 and 170.

In FIG. 2K, and in method 100 at 170, the pattern can be transferred tothe hard mask 220 to form patterned hard mask 222 and openings 224.During or after forming the patterned hard mask 222, the patternedoptional layer 232 (or patterned bottom layer 242 if there is nooptional layer 222) can be removed, as illustrated in FIG. 2L.

At 180 of method 100, the substrate or dielectric layer 210 can bepatterned through openings 224 in patterned hard mask 222 to form apatterned dielectric layer 212, as shown in FIG. 2M. The pattern in thedielectric layer 212 appears as openings 214, trenches or vias,depending on the application. During or after forming the patterneddielectric layer 212, the patterned hard mask 222 can be removed by anysuitable process, as illustrated in FIG. 2N.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe invention. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments.

Although the invention herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent invention. It will be apparent to those skilled in the art thatvarious modifications and variations can be made to the method andapparatus of the present invention without departing from the spirit andscope of the invention. Thus, it is intended that the present inventioninclude modifications and variations that are within the scope of theappended claims and their equivalents.

What is claimed is:
 1. A film stack for EUV patterning, the film stack comprising: a low-k dielectric; a hard mask on the low-k dielectric, the hard mask comprising one or more of titanium nitride (TiN) or tungsten carbide (WC) and having a thickness less than or equal to about 200 Å; an optional layer comprising silicon oxide having a thickness less than or equal to about 200 Å on the hard mask; a bottom layer on the optional layer or the hard mask, the bottom layer comprising diamond-like carbon and having a thickness less than or equal to about 300 Å; a middle layer on the bottom layer, the middle layer having a thickness less than or equal to about 200 Å, the middle layer comprising one or more of a bottom anti-reflective coating (BARC), dielectric anti-reflective coating (DARC), a doped silicon, or doped boron; and a patterned photoresist on the middle layer, the patterned photoresist comprising an organic resist having a thickness less than or equal to about 280 Å or a metal oxide photoresist with a thickness less than or equal to about 130 Å.
 2. The film stack of claim 1, wherein the photoresist comprises an organic resist having a thickness less than or equal to about 280 Å.
 3. The film stack of claim 1, wherein the photoresist comprises a metal oxide photoresist with a thickness less than or equal to about 130 Å.
 4. The film stack of claim 1, wherein the diamond-like carbon has a density greater than 1.8 g/cc, a modulus greater than 150 GPa, and a stress less than −500 MPa.
 5. The film stack of claim 1, wherein the diamond-like carbon has an sp3 carbon content in a range of from 50 percent to 90 percent.
 6. The film stack of claim 1, wherein the low-k dielectric comprises SiCOH.
 7. The film stack of claim 1, wherein the optional layer is present.
 8. The film stack of claim 1, wherein the middle layer has a thickness of less than or equal to above 160 Å.
 9. The film stack of claim 1, wherein the doped silicon comprises phosphorus doped silicon.
 10. The film stack of claim 1, wherein the middle layer consists essentially of amorphous silicon.
 11. The film stack of claim 1, further comprising a modified patterned middle layer.
 12. The film stack of claim 11, wherein the modified patterned middle layer comprises silicon oxide.
 13. A film stack for EUV patterning, the film stack comprising: a low-k dielectric; a hard mask on the low-k dielectric, the hard mask comprising one or more of titanium nitride (TiN) or tungsten carbide (WC) and having a thickness less than or equal to about 200 Å; an optional layer comprising silicon oxide having a thickness less than or equal to about 200 Å on the hard mask; a bottom layer on the optional layer or the hard mask, the bottom layer comprising diamond-like carbon and having a thickness less than or equal to about 300 Å; a modified patterned middle layer on the bottom layer, the modified middle layer comprising silicon oxide; and a patterned photoresist on the modified middle layer, the patterned photoresist comprising an organic resist having a thickness less than or equal to about 280 Å or a metal oxide photoresist with a thickness less than or equal to about 130 Å.
 14. The film stack of claim 13, wherein the photoresist comprises an organic resist having a thickness less than or equal to about 280 Å.
 15. The film stack of claim 13, wherein the photoresist comprises a metal oxide photoresist with a thickness less than or equal to about 130 Å.
 16. The film stack of claim 13, wherein the diamond-like carbon has a density greater than 1.8 g/cc, a modulus greater than 150 GPa, and a stress less than −500 MPa.
 17. The film stack of claim 13, wherein the diamond-like carbon has an sp3 carbon content in a range of from 50 percent to 90 percent.
 18. The film stack of claim 13, wherein the low-k dielectric comprises SiCOH.
 19. The film stack of claim 13, wherein the optional layer is present.
 20. The film stack of claim 13, further comprising a middle layer on the bottom layer, the middle layer having a thickness less than or equal to about 200 Å, the middle layer comprising one or more of a bottom anti-reflective coating (BARC), dielectric anti-reflective coating (DARC), a doped silicon, or doped boron. 